Modeling and Characterization of Gas‐Phase Etching of Thermal Oxide and TEOS Oxide Using Anhydrous HF and CH 3 OH-Reference-Cited by-同舟云学术

Modeling and Characterization of Gas‐Phase Etching of Thermal Oxide and TEOS Oxide Using Anhydrous HF and CH 3 OH

Published:1996-03-01 Issue:3 Volume:143 Page:1099-1103
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Lee Chun Su¹²,Baek Jong Tae¹²,Yoo Hyung Joun¹²,Woo Seong Ihl¹²

Affiliation:

1. Electrocnics and Telecommunications Research Institute, Semiconductor Division, Yusong, Taejon 305‐600, Korea

2. Department of Chemical Engineering, Korea Advanced Institute of Science and Technology, 373‐1 Kusong‐Dong, Yusong‐Gu, Taejon 305‐701, Korea

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1836590/pdf

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