Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations-Reference-Cited by-同舟云学术

Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations

Published:1993-12-01 Issue:12 Volume:140 Page:3679-3683
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Rolland A.¹²,Richard J.¹²,Kleider J. P.¹²,Mencaraglia D.¹²

Affiliation:

1. Centre National d'Etudes des Télécommunications, LAB/OCM/TEP BP 40, 22301 Lannion, France

2. Laboratoire de Génie Electrique de Paris (URA 127 du CNRS), Ecole Supérieure d'Electricité, Universités Paris‐SUD et Paris VI, Plateau de Moulon, 91192 Gif‐sur‐Yvette Cedex, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2221149/pdf

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