A Physical Model for Dishing during Metal CMP-Reference-Cited by-同舟云学术

A Physical Model for Dishing during Metal CMP

Published:2003 Issue:11 Volume:150 Page:G689
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Nguyen Viet H.,Daamen Roel,van Kranenburg Herma,van der Velden Peter,Woerlee Pierre H.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference13 articles.

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3. Pattern Geometry Effects in the Chemical‐Mechanical Polishing of Inlaid Copper Structures

4. S. Sivaram, H. Bath, E. Lee, R. Legett, and R. Tolles, inAdvanced Metallization for ULSI Applications in 1991, V. Rana, R. Joshi, and I. Ohdomari, Editors, p. 511, Materials Research Society, Pittsburgh, PA (1992).

5. E. P. Popov, inMechanics of Materials, p. 353, Prentice Hall, Englewood Cliffs, NJ (1976).

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