Author:
Kunert Bernardette,Guo Weiming,Mols Yves,Langer Robert,Barla Kathy
Abstract
Selective area growth by metal organic vapor phase epitaxy of III/V nano ridges on patterned (001) Si substrates was investigated applying different growth conditions. The deposition of mismatched III/V materials in narrow oxide trenches leads to an efficient defect trapping at the trench side walls whereas the growth out of the trenches allows for a clear ridge formation with increased III/V volume. The ridge evolution depends strongly on the chosen growth parameters as well as mask pattern. InGaAs/GaAs and InGaP/GaAs hetero-structures were integrated on box shaped GaAs nano ridges in order to realize first laser device structures for optoelectronics on 300 mm Si substrate.
Publisher
The Electrochemical Society
Cited by
36 articles.
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