Author:
Nara Yasuo,Mise Nobuyuki,Kadoshima Masaru,Morooka Tetsu,Kamiyama Satoshi,Matsuki Takeo,Sato Motoyuki,Ono Tetsuo,Aoyama Takayuki,Eimori Takahisa,Ohji Yuzuru
Abstract
We will give practical and manufacturable solutions for metal gate/dual high-k CMOS fabrication processes with low threshold voltages which are suitable for scaled CMOS device manufacturing.
Publisher
The Electrochemical Society
Cited by
2 articles.
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