Masking Considerations in Chemically Assisted Ion Beam Etching of GaAs / AlGaAs Laser Structures-Reference-Cited by-同舟云学术

Masking Considerations in Chemically Assisted Ion Beam Etching of GaAs / AlGaAs Laser Structures

Published:1989-03-01 Issue:3 Volume:136 Page:779-782
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Behfar‐Rad A.¹²,Wong S. S.¹²,Davis R. J.¹²,Wolf E. D.¹²

Affiliation:

1. School of Electrical Engineering, Cornell University, Ithaca, New York 14853

2. School of Applied and Engineering Physics and National Nanofabrication Facility, Cornell University, Ithaca, New York 14853

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2096742/pdf

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