Ultraviolet Nanosecond Laser Annealing for Low Temperature 3D-Sequential Integration Gate Stack-Reference-Cited by-同舟云学术

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Ultraviolet Nanosecond Laser Annealing for Low Temperature 3D-Sequential Integration Gate Stack

Published:2019-10-22 Issue:1 Volume:93 Page:19-22
ISSN:1938-6737
Container-title:ECS Transactions
language:en
Short-container-title:ECS Trans.

Author:

Kerdilès Sébastien,Acosta-Alba Pablo,Royet Anne-Sophie,Lassarre Jessica,Perrot Cédric,Aussenac François,Brunet Laurent,Fenouillet-Beranger Claire

Publisher

The Electrochemical Society

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Scanning Nanosecond Laser Anneal with Variable Dwell and Real-time Process Control for Advanced Logic and Memory Applications;2023 21st International Workshop on Junction Technology (IWJT);2023-06-08

2. A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration;IEEE Transactions on Electron Devices;2021-07

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