Modeling and Analysis of Gallium Oxide Vertical Transistors
Author:
Funder
Department of Energy | Laboratory Directed Research and Development
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference15 articles.
1. A review of Ga2O3materials, processing, and devices
2. Kumar S. Pratiyush A. S. Muralidharan R. Nath D. N. , “A performance comparison between β-Ga2O3 and GaN High Electron Mobility Transistors,” arXiv preprint, arXiv:1802.02313 (2018).
3. State-of-the-art technologies of gallium oxide power devices
4. Gallium Oxide: Technology, Devices, Elsevier, 2019.
5. How Much Will Gallium Oxide Power Electronics Cost?
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