Simulation of Deep-Level Trap Distributions in AlGaN/GaN HEMTs and Its Influence on Transient Analysis of Drain Current-Reference-Cited by-同舟云学术

Simulation of Deep-Level Trap Distributions in AlGaN/GaN HEMTs and Its Influence on Transient Analysis of Drain Current

Published:2017 Issue:11 Volume:6 Page:S3093-S3098
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Mukherjee S.,Patrick E. E.,Law M. E.

Funder

DOD | Defense Threat Reduction Agency (DTRA)

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference27 articles.

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2. GaN Technology for Power Electronic Applications: A Review

3. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

4. Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors

5. Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance;Polyakov;J. Vac. Sci. Technol. B Nanotechnol. Microelectron. Mater. Process. Meas. Phenom.,2015

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