Author:
Ligatchev V.,Wong T. K. S.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Competing relaxation mechanisms in strained layers
2. L. Ley , inPhysics of the Hydrogenated Amorphous Silicon, J. Jounopulos and G. Lucovski , Editors, Springer-Verlag, Berlin (1984).
3. Atomic structure and defect densities in low dielectric constant carbon doped hydrogenated silicon oxide films, deposited by plasma-enhanced chemical vapor deposition
4. A.I. Anselm ,Introduction to Semiconductor Theory, p. 160, Moscow, Mir, Prentice-Hall, Englewood Cliffs, NJ (1981).
5. S.A. Ringel and P.N. Grilot , inSemiconductors and Semimetals, Vol. 56, p. 293, Academic Press, New York (1999).
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献