Preparation of High-luminance SrGa2S2:Eu Thin Film Phosphors by Laser Annealing

Abstract

Preparation of green-emitting SrGa2S4:Eu thin film phosphors by low temperature process at lower than 600oC under an assist with a laser annealing technique after the deposition was investigated. It was shown that the crystallinity and emission intensity of the SrGa2S4:Eu film annealed at 500oC were improved considerably by the assist with laser annealing using KrF excimer laser. As a result, the film showed cathodoluminescent (CL) luminance of about 2,000 cd/m2 under excitation with 5kV and 60uA/cm2. It was found from these results indicate that the laser annealing technique assists the improvement of both structural and luminescent properties.