(Keynote) Status and Challenges in Spin-Transfer Torque MRAM Technology

Abstract

Perpendicular MTJ based Spin-Transfer Torque Magneto-resistive Random Access Memory (STT-MRAM) has been considered as a promising candidate for next generation non-volatile memory due to a combination of fast speed, high endurance, excellent scalability, and ease of integration with the standard CMOS processes. Despite significant progress, there are many remaining hurdles in its productization. They are stemming from a set of requirements imposed on the MTJ performance: simultaneously high magneto-resistance at low RA (Resistance x Area) product, low writing current/voltage and high thermal stability, low write and read error rates and high endurance cycles. We will discuss the inter-dependencies of these parameters, report our progress in meeting these requirements, and our development approaches for future challenges.