Transient Observation of Peltier Effect for PtSix-Coated n-Type Silicon: Cooler for 4H-SiC-Based Power Devices-Reference-Cited by-同舟云学术

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Transient Observation of Peltier Effect for PtSix-Coated n-Type Silicon: Cooler for 4H-SiC-Based Power Devices

Published:2017 Issue:3 Volume:6 Page:N3089-N3094
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Furubayashi Yutaka,Tanehira Takafumi,Yonemori Kei,Seo Nobuhide,Kuroki Shin-Ichiro

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Electrical and Thermal Properties ofBi2Te3

2. Seebeck Effect in Silicon

3. Performance Estimation of Silicon-Based Self-Cooling Device

4. Thermal Conductivity of Silicon from 300 to 1400°K

5. Molecular dynamics simulation of thermal conductivity of silicon nanowires

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (Invited)Peltier Effect of Silicon for Cooling 4H-SiC-Based Power Devices;ECS Transactions;2017-08-08

2. Calculation of Seebeck Coefficients for Advanced Heat Transfer Modules;ECS Transactions;2017-08-08

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