Al2O3-Passivated Graded-Barrier AlxGa1-xN/AlN/GaN/Si Heterostructure Field-Effect Transistor by Hydrogen Peroxide Oxidization Method
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
2. Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity
3. Comparative Studies on InAlAs/InGaAs MOS-MHEMTs with Different Compressive/Tensile-Strained Channel Structures
4. Investigation of Temperature-Dependent Characteristics of AlGaN/GaN MOS-HEMT by Using Hydrogen Peroxide Oxidation Technique
5. Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Comparative Study of AlGaN/AlN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Ni/Au Gate Electrode;ECS Journal of Solid State Science and Technology;2021-10-01
2. Comparative Study on Graded-Barrier AlxGa1−xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique;Semiconductor Science and Technology;2018-04-26
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