Atomic Layer Deposition of Low-Resistivity and High-Density Tungsten Nitride Thin Films Using B[sub 2]H[sub 6], WF[sub 6], and NH[sub 3]-Reference-Cited by-同舟云学术

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Atomic Layer Deposition of Low-Resistivity and High-Density Tungsten Nitride Thin Films Using B[sub 2]H[sub 6], WF[sub 6], and NH[sub 3]

Published:2006 Issue:3 Volume:9 Page:C54
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kim Soo-Hyun,Kim Jun-Ki,Kwak Nohjung,Sohn Hyunchul,Kim Jinwoong,Jung Sung-Hoon,Hong Mi-Ran,Lee Sang Hyeob,Collins Josh

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference23 articles.

1. Ultrathin Diffusion Barriers/Liners for Gigascale Copper Metallization

2. International Technology Roadmap for Semiconductors , 2003 ed., p. 7, SIA, 〈http://public.itrs.net/Files/2003ITRS/Home2003.htm〉

3. Atomic Layer Deposition of Tungsten Nitride Films Using Sequential Surface Reactions

4. Diffusion Barrier Deposition on a Copper Surface by Atomic Layer Deposition

5. Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia

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2. Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier;Thin Solid Films;2019-09

3. Recent progress of transition metal nitrides for efficient electrocatalytic water splitting;Sustainable Energy & Fuels;2019

4. (Invited) Atomic Layer Deposition of Tungsten-Rich Tungsten Carbide Films Using WCl6 and AlH2(tBuNCH2CH2NMe2) as Precursors;ECS Transactions;2018-07-20

5. Effects of H2 and N2 treatment for B2H6 dosing process on TiN surfaces during atomic layer deposition: an ab initio study;RSC Advances;2018

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