Resistive Switching in p-Type Nickel Oxide/n-Type Indium Gallium Zinc Oxide Thin Film Heterojunction Structure-Reference-Cited by-同舟云学术

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Resistive Switching in p-Type Nickel Oxide/n-Type Indium Gallium Zinc Oxide Thin Film Heterojunction Structure

Published:2016 Issue:9 Volume:5 Page:Q239-Q243
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Li H. K.,Chen T. P.,Hu S. G.,Lee W. L.,Liu Y.,Zhang Q.,Lee P. S.,Wang X. P.,Li H. Y.,Lo G.-Q.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Effect of Heat Diffusion During State Transitions in Resistive Switching Memory Device Based on Nickel-Rich Nickel Oxide Film

3. Competition of Resistive-Switching Mechanisms in Nickel-Rich Nickel Oxide Thin Films

4. Oxide Heterostructure Resistive Memory

5. Improved bipolar resistive switching properties in CeO2/ZnO stacked heterostructures

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of lithium (Li) doping on the resistive switching property of p-Li:NiO/n-β-Ga2O3 thin-film based heterojunction devices;Applied Physics Letters;2023-01-09

2. Impact of Nonuniform Ozone Anneal Treatment on the Resistance Levels in an IGZO-ReRAM Fabricated on ITO-Coated Glass Substrate;IEEE Transactions on Electron Devices;2021-12

3. Extracting the Critical Breakdown Electrical Field of Amorphous Indium-Gallium-Zinc-Oxide From the Avalanche Breakdown of n-Indium-Gallium-Zinc-Oxide/p+-Nickel-Oxide Heterojunction Diode;IEEE Electron Device Letters;2020-07

4. Bipolar resistive switching characteristics of a sol-gel InZnO oxide semiconductor;Physica B: Condensed Matter;2019-05

5. Mechanism of Nonvolatile Resistive Switching in ZnO/α-Fe2O3 Core–Shell Heterojunction Nanorod Arrays;The Journal of Physical Chemistry C;2017-06-02

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