Silicon Contamination of InP Synthesized under High Phosphorus Pressure-Reference-Cited by-同舟云学术

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Silicon Contamination of InP Synthesized under High Phosphorus Pressure

Published:1981-03-01 Issue:3 Volume:128 Page:585-589
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Yamamoto A.¹,Shinoyama S.¹,Uemura C.¹

Affiliation:

1. Nippon Telegraph and Telephone Public Corporation, Ibaraki Electrical Communication Laboratory, Tokai, Ibaraki 319‐11, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2127463/pdf

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modified horizontal synthesis of polycrystalline indium phosphide;Journal of Solid State Chemistry;2024-01

2. Noncontact evaluation of nondoped InP wafers by terahertz time-domain spectroscopy;Journal of the Optical Society of America B;2009-04-21

3. Residual Shallow Donor- and Acceptor-Impurities in SSD- and LEC-Grown High-Purity InP Crystals;Defect and Diffusion Forum;2001-11

4. Impurity Effect on Recombination Processes in InP;Japanese Journal of Applied Physics;1996-05-30

5. Growth of InP crystals by the horizontal gradient freeze technique;Materials Science and Engineering: B;1991-07

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