Resistance Switching Characteristics in Polycrystalline Silicon Film Resistors-Reference-Cited by-同舟云学术

Resistance Switching Characteristics in Polycrystalline Silicon Film Resistors

Published:1985-05-01 Issue:5 Volume:132 Page:1193-1196
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Lu Chih‐Yuan¹²³,Lu Nicky Chau‐Chun¹²³,Shih Chih‐Ching¹²³

Affiliation:

1. AT&T Bell Laboratories, Reading, Pennsylvania 19603‐0856; Institute of Electronics, National Chiao‐Tung University, Hsin‐Chu, Taiwan, 300, China; Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7911

2. IBM T.J. Watson Research Center, Yorktown Heights, New York 10598

3. Institute of Electronics, National Chiao‐Tung University, Hsin‐Chu, Taiwan 300, China

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2114057/pdf

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