Abstract
The development of high voltage, high current density and high temperature power devices are playing a critical role in the advance of power conversion technology for energy saving and emission reduction applications. As hopeful replacements for current silicon-based devices, wide bandgap power semiconductor devices have been under intense research and development. This paper reviews the recent advances in SiC and GaN-based power switching devices for power electronics applications.
Publisher
The Electrochemical Society
Cited by
7 articles.
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