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Growth of 3C-SiC Thin Film on AlN/Si(100) with Atomically Abrupt Interface via Tailored Precursor Feeding Procedure

  • Published:2010 Issue:7 Volume:13 Page:D53
  • ISSN:1099-0062
  • Container-title:Electrochemical and Solid-State Letters
  • language:en
  • Short-container-title:Electrochem. Solid-State Lett.

Author:

Lien Wei-Cheng,Cheng Kan Bun,Senesky Debbie G.,Carraro Carlo,Pisano Albert P.,Maboudian Roya

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference27 articles.

1. Optimum semiconductors for high-power electronics

2. S. E. Saddow and A. Agarwal , Advances in Silicon Carbide Processing and Applications , p. 1, Artech House, Boston (2004).

3. Silicon carbide MEMS for harsh environments

4. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

5. SiC materials-progress, status, and potential roadblocks

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