Affiliation:
1. Nippon Telegraph and Telephone Public Corporation, Musashino Electrical Communication Laboratory, Musashino, Tokyo, 180 Japan
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Cited by
14 articles.
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1. The 3-D profiling of B ions implanted into Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-01
2. Ion Implantation;Fundamentals of Semiconductor Processing Technology;1995
3. Channeling implants of B ions into silicon surfaces;Radiation Effects and Defects in Solids;1991-07
4. Implant uniformity evaluation using a Varian/Extrion scan compensator module on an electrostatic scanning ion implanter;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04
5. Formation of Shallow Boron‐Doped Layer for Channel Doping Using Preamorphization;Journal of The Electrochemical Society;1990-09-01