Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs
Author:
Funder
Korean Government
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
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1. Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation;AIP Advances;2023-04-01
2. Effect of Double Insulators on the Performance Improvement of 3 MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs;ECS Journal of Solid State Science and Technology;2023-03-01
3. Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator;Nanomaterials;2023-02-27
4. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review;Micromachines;2022-12-01
5. Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors;Crystals;2021-11-19
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