A Simple Electron Mobility Model Considering the Impact of Silicon-Dielectric Interface Orientation for Surrounding Gate Devices

Abstract

In this work, we present a simple mobility model that takes into account the variation of the carrier's mobility according to crystallographic orientations of the silicon-dielectric interface. The effective mobility of simulated devices was compared to experimental data for several interface orientations and showed good agreement. The model has been applied to a CYNTHIA nMOS transistor and allowed the observation of non-uniform current density around the silicon pillar due to electron mobility variation.