Native Oxide Mask for Zinc Diffusion in Gallium Arsenide

Author:

Spitzer S. M.,Schwartz B.,Weigle G. D.

Abstract

This paper reports the first use of an amorphous native oxide on gallium arsenide to mask against zinc diffusion. Anodic oxides were grown at low temperature (≤100°C), and stripes were defined in this oxide using standard photolithographic processing. These samples were diffused, after an appropriate annealing cycle, in a closed system using a zinc source ( Zn 3 As 2 + GaAs ) at 612°C for times up to 2 hr. Diffusion depths were measured using a lap and stain procedure, and the results showed the oxide to be effective as a zinc barrier. Furthermore, no anomalous lateral underdiffusion was observed indicative of a high integrity interface between the oxide and semiconductor.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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