Characterization of HfO[sub 2] and HfO[sub x]N[sub y] Gate Dielectrics Grown by PE Metallorganic CVD with a TaN Gate Electrode-Reference-Cited by-同舟云学术

Characterization of HfO[sub 2] and HfO[sub x]N[sub y] Gate Dielectrics Grown by PE Metallorganic CVD with a TaN Gate Electrode

Published:2004 Issue:4 Volume:151 Page:G262
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Choi Kyu-Jeong,Kim Jeon-Ho,Yoon Soon-Gil

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference11 articles.

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3. B. H. Lee, R. Choi, L. Kang, S. Gopalan, R. Nieh, K. Onishi, Y. Jeon, W. Qi, C. Kang, and J. C. Lee,Tech. Dig. - Int. Electron Devices Meet.,2000, 39.

4. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

5. K. Onishi, L. Kang, R. Choi, E. Dharmarajan, S. Gopalan, Y. J. Jeon, C. S. Kang, B. H. Lee, R. Nieh, and J. C. Lee,VLSI Tech. Dig.,2001, 131.

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