Effect of Oxidation Enhanced Diffusion on Hot Carrier Injection Induced Degradation in N-Type High-Voltage DDDMOSFET
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Published:2010-11-23
Issue:1
Volume:27
Page:255-260
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Deng ZhangPeng,Li Xi,Zhang Rui H.,Yun Yueyun,Huang Aibo,Cao Gang,Shi Yanling
Abstract
This paper investigates how the oxidation enhanced diffusion effect influences the reliability of hot carrier injection (HCI) in N-type high-voltage double-diffused drain MOSFET (DDDMOSFET). The oxidation enhanced diffusion influences impurity diffusion in silicon evidently, thus changes the device characteristic and reliability. By NDD drive-in at high temperature with N2 + O2 mixed atmosphere, we make use of the oxidation enhanced diffusion effect in NDD region of N-type HV DDDMOSFET to improve the HCI reliability. And the results are accordant with reliability simulation of TCAD softwar.
Publisher
The Electrochemical Society