Author:
Gervasoni Michael,Machness Ariella,Goorsky Mark
Abstract
Devices based on III-V semiconductors have generated widespread interest due to their superior performance over conventional semiconductors. However, III-Vs are inhibited from mass commercialization because of high costs. Thus, there is a motivation to develop affordable, high-quality thin film III-V devices, which has been realized through exfoliation techniques. In this work, a porous InP structure with optimal morphology was fabricated for exfoliation. A relationship between surface porosity and current density was determined for obtaining a desirable porous structure. Surface porosities as low as 0.02% were achieved, and it was found that reducing the porosity lowered the surface roughness. Thus, porous layers with surface roughness approaching polished InP were demonstrated. The porosities and surface roughness obtained are lower than previously reported and more ideal for growing a low-defect epitaxial film. By growing higher quality epitaxial films on a reusable seed wafer, high performance and cost effective III-V devices are made possible.
Publisher
The Electrochemical Society
Cited by
1 articles.
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