Al2 O 3 Films Formed by Anodic Oxidation of Al‐1 Weight Percent Si‐0.5 Weight Percent Cu Films-Reference-Cited by-同舟云学术

Al2 O 3 Films Formed by Anodic Oxidation of Al‐1 Weight Percent Si‐0.5 Weight Percent Cu Films

Published:1995-02-01 Issue:2 Volume:142 Page:525-531
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Chiu Re‐Long¹²,Chang Peng‐Heng¹²,Tung Chih‐Hang¹²

Affiliation:

1. Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 30049

2. Electronics Research and Service Organization, Industrial Technology Research Institute, Chu‐Tung, Taiwan 31015

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2044093/pdf

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