Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers-Reference-Cited by-同舟云学术

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Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers

Published:2003 Issue:1 Volume:150 Page:G1
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Nigam S.,Kim Jihyun,Luo B.,Ren F.,Chung G. Y.,MacMillan M. F.,Williams J. R.,Pearton S. J.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. J. B. Casady, inProcessing of Wide Bandgap Semiconductors, S. J. Pearton, Editor, William Andrews Publishing, Norwich, NY (2000).

2. Electrical and optical characterization of SiC

3. SiC Power Devices

4. 4H-SiC MESFET's with 42 GHz f/sub max/

5. Direct current characterization of depletion-mode 6HSiC MOSFETs from 294 to 723 K

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