Application of the Point Defect Model to the Oscillatory Anodic Oxidation of Illuminated n-Type Silicon in the Presence of Fluoride Ions Using Electrochemical Impedance Spectroscopy

Abstract

This work aims to provide insight into the oscillations occurring during the anodic electrooxidation of Si in fluoride-containing electrolytes using electrochemical impedance spectroscopy (EIS). The EIS measurements were conducted within less than a tenth of the oscillation periods allowing changes in the electrical properties of the silicon/oxide/electrolyte interfaces to be monitored during an oscillatory cycle. Application of the power law model to the experimental data revealed a significant change in resistivity at the oxide/semiconductor interface while the properties at the oxide/electrolyte interface remained constant and the oxide layer varied only by about 1 nm around an average value of about 4.9 nm. The application of the point defect model to the semiconductor/oxide/F−-containing electrolyte interface suggests that the oscillations are linked to the time delay between the production of oxygen vacancies at the Si/oxide interface and their consumption at the oxide/electrolyte interface.