Nanoengineering of MXene-Based Field-Effect Transistor Gas Sensors: Advancements in Next-Generation Electronic Devices

Abstract

In recent years, Two-Dimensional (2D) materials have gained significant attention for their distinctive physical and chemical properties, positioning them as promising contenders for the next generation of electronic technologies. One notable group within these materials is MXenes, which have exhibited remarkable breakthroughs across various technological domains, including catalysis, renewable energy, electronics, sensors, fuel cells, and supercapacitors. By making subtle modifications to the surface termination, introducing metal ions, precise etching timing, and applying surface functionalization, the characteristics of MXenes can be fine-tuned to achieve desired band structures, rendering them suitable for sensor design. This review focuses on the strategic development of gas sensors based on Field-Effect Transistors (FETs), thoroughly examining the latest progress in MXene-based material design and addressing associated challenges and future prospects. The review aims to provide a comprehensive overview of MXene, summarizing its current applications and advancements in FET-based gas sensing.