Composite Porous Structure Formation by Platinum-Particle-Assisted Etching of a Highly-Doped p-Type Silicon: Evaluation of Charge Flow in Silicon

Abstract

Electroless deposition of metal particles on silicon (Si) followed by the metal-assisted etching (metal-assisted chemical etching) is a simple way to fabricate Si nanostructures. A composite porous structure consisting of straight macropores and a mesoporous layer can be created by platinum (Pt)-particle-assisted etching. In this work, we studied the composite structure formation on a highly-doped p-Si (ca. 5 × 1018 cm−3) in comparison with a moderately-doped p-Si (ca. 1 × 1015 cm−3). The composite structure drastically changed: the ratio of mesoporous layer thickness to macropore depth increased to 1.1 from 0.16 by using the highly-doped Si instead of the moderately-doped Si. The open circuit potential of Si in the etching solution shifted to the positive direction by the Pt deposition. The potential shift of highly-doped Si was smaller than that of moderately-doped Si, which can be explained by the polarization characteristics. We calculated the band bending in Si by using a device simulator that reproduced the conditions of Pt-particle-assisted etching. The results indicated that, in the case of highly-doped Si, the consumption rate of positive holes at the Si surface away from the Pt particles increases due to the tunneling effect, which is consistent with the thick mesoporous layer formation.