Carrier Profiling and Crystal Quality Evaluation of Thin Al[sub x]Ga[sub 1−x]As (0.22<x<0.86) Films by Electrochemical Capacitance/Voltage Technique-Reference-Cited by-同舟云学术

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Carrier Profiling and Crystal Quality Evaluation of Thin Al[sub x]Ga[sub 1−x]As (0.22

Published:2003 Issue:7 Volume:150 Page:G380
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Fedorenko Y.,Jouhti T.,Konttinen J.,Likonen J.,Pessa M.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers

2. P. Blood and J. W. Orton,The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Chap. 6, p. 277, Academic Press, NY (1992).

3. C-V Profiling of GaAs Using Electrolyte Barriers

4. Carrier Profiling of a Heterojunction Bipolar Transistor and p–i–n Photodiode Structures by Electrochemical C–V Technique

5. S. R. Morrison,The Chemical Physics of Surfaces, Chap. 8, Plenum Publishing, NY (1977).

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