Tantalum Nitride Films Grown by Inorganic Low Temperature Thermal Chemical Vapor Deposition Diffusion Barrier Properties in Copper Metallization-Reference-Cited by-同舟云学术

Tantalum Nitride Films Grown by Inorganic Low Temperature Thermal Chemical Vapor Deposition Diffusion Barrier Properties in Copper Metallization

Published:1999-01-01 Issue:1 Volume:146 Page:170-176
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Kaloyeros Alain E.¹,Chen Xiaomeng¹,Stark Tanja¹,Kumar Kaushik¹,Seo Soon‐Cheon¹,Peterson Gregory G.¹,Frisch Harry L.¹,Arkles Barry²,Sullivan John³

Affiliation:

1. New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany‐SUNY, Albany, New York 12222, United States of America

2. Gelest Incorporated, Tullytown, Pennsylvania 19007, United States of America

3. MKS Instrument Incorporated, Andover, Massachusetts 01810, United States of America

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1391582/pdf

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