Integration of Dual Metal Gate CMOS on High-k Dielectrics Utilizing a Metal Wet Etch Process-Reference-Cited by-同舟云学术

Integration of Dual Metal Gate CMOS on High-k Dielectrics Utilizing a Metal Wet Etch Process

Published:2005 Issue:10 Volume:8 Page:G271
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Zhang Zhibo,Song S. C.,Huffman Craig,Hussain Muhammad M.,Barnett Joel,Moumen Naim,Alshareef Husam N.,Majhi Prashant,Sim Johnny H.,Bae Sang Ho,Lee Byoung Hun

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference16 articles.

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2. Dual-work-function metal gates by full silicidation of poly-Si with Co-Ni bi-Layers

3. K.G. Anil, A. Veloso, S. Kubicek, T. Schram, E. Augendre, J.-F. de Marneffe, K. Devriendt, A. Lauwers, S. Brus, K. Henson, and S. Biesemans , VLSI Technology Digest , p. 190 (2004).

4. C. Cabral, Jr., J. Kedzierski, B. Linder, S. Zafar, V. Narayanan, S. Fang, A. Steegen, P. Kozlowski, R. Carruthers, and R. Jammy , VLSI Technology Digest , p. 184 (2004).

5. Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation

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