Development of Next Generation Post Copper CMP Cleaners

Abstract

Development of post copper CMP cleaning formulations that effectively remove the residues left from the CMP step and corrosion at the conductor and barrier to almost undetectable levels is described. Organic residue removal efficiency and corrosion of interconnects and barrier materials are discussed. Post CMP particle and residue defectivity data will also be presented to demonstrate the cleaning efficiency of the new formulations.