Work Function Tuning of Ti[sub x]Si[sub y]N[sub z] Electrodes Using Partial Saturation of Chemisorbing Surface during Pulsing Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Work Function Tuning of Ti[sub x]Si[sub y]N[sub z] Electrodes Using Partial Saturation of Chemisorbing Surface during Pulsing Chemical Vapor Deposition

Published:2009 Issue:7 Volume:12 Page:H272
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Fillot F.,Maı̂trejean S.,Pierre F.,Chenevier B.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference22 articles.

1. International Technology Roadmap of Semiconductor 2007, http://public.itrs.net/, last accessed April 30, 2009.

2. C. Cheng, B. Maiti, S. Samavedam, J. Grant, B. Taylor, P. Tobin, and J. Mogab , in IEEE International Silicon on Insulator Conference , pp. 91–92 (2001).

3. Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation

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