Experimental Demonstration of n- and p-channel GaN-MOSFETs toward Power IC Applications
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference38 articles.
1. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
2. GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
3. Synthesis and Evaluation of Thick Films of Electrochemically Deposited Bi2Te3 and Sb2Te3 Thermoelectric Materials
4. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers
5. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology
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1. Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs;ECS Journal of Solid State Science and Technology;2023-05-01
2. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic;Applied Physics Letters;2023-04-03
3. Development of differential amplifier circuits based on radiation hardened H-diamond MOSFET (RADDFET);Diamond and Related Materials;2023-04
4. Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel;Applied Physics Letters;2021-10-04
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