Influence of Yttrium Addition on the High Capacitance of ZrO2-SiO2 Nanocomposite Anodic Oxide Films
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Published:2013-04-01
Issue:43
Volume:50
Page:245-254
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Ishizuka Masatoshi,Tsuji Etsushi,Aoki Yoshitaka,Hyono Atsushi,Ohtsuka Toshiaki,Sakaguchi Norifumi,Nagata Shinji,Habazaki Hiroki
Abstract
The sputter-deposited Zr-Si-Y film was anodized to form a high capacitance composite anodic film, comprising a tetragonal ZrO2 nanocrystalline phase and a silicon-enriched amorphous phase. It was found that the nanocomposite anodic film, as well as the yttrium-free ZrO2-SiO2 anodic film, showed markedly increased capacitance compared with the anodic film ZrO2 film on zirconium. The incorporation of yttrium species to the anodic ZrO2-SiO2 film did not change the thickness and permittivity of the anodic oxide film, although a thicker anodic film was formed on zirconium by the incorporation of yttrium, which may introduce oxygen vacancies in the crystalline ZrO2. The findings suggest that in the composite ZrO2-SiO2 anodic films the film thickness is mainly controlled by the silicon-enriched amorphous phase.
Publisher
The Electrochemical Society