Author:
Matero Raija,Rahtu Antti,Haukka Suvi,Tuominen Marko,Vehkamäki Marko,Hatanpää Timo,Ritala Mikko,Leskelä Markku
Abstract
BaTiO3 films were deposited onto 200 mm silicon wafers by Atomic Layer Deposition (ALD) from barium bis(tris(tert-butyl) cyclopentadienyl) Ba(tBu3CpH2)2, titanium methoxide Ti(OMe)4 and water H2O. The films were characterized for thickness uniformity, stoichiometry and crystallinity. The thickness non- uniformity varied from 2.7 to 6.0% with different Ba(tBu3CpH2) 2 - H2O / Ti(OMe)4 - H2O cycle ratios. The most stoichiometric films were obtained with the 5:3 and 2:1 BaO:TiO2 cycling ratios. The as-deposited films were amorphous but were crystalline after thermal annealing. The study showed that this process can be transferred from small experimental scale to large production scale wafers.
Publisher
The Electrochemical Society
Cited by
7 articles.
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