Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology-Reference-Cited by-同舟云学术

Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology

Published:2014 Issue:4 Volume:3 Page:P82-P85
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Wang Guilei,Xu Qiang,Yang Tao,Xiang Jinjuan,Xu Jing,Gao Jianfeng,Li Chunlong,Li Junfeng,Yan Jiang,Chen Dapeng,Ye Tianchun,Zhao Chao,Luo Jun

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference18 articles.

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3. Tateshita Y. Wang J. Nagano K. Hirano T. Miyanami Y. Ikuta T. Kataoka T. Kikuchi Y. Yamaguchi S. Ando T. , in Electron Devices Meeting, 2006. IEDM’06. International, p. 1 (2006).

4. Mistry K. Allen C. Auth C. Beattie B. Bergstrom D. Bost M. Brazier M. Buehler M. Cappellani A. Chau R. , in Electron Devices Meeting, 2007. IEDM 2007. IEEE International, p. 247 (2007).

5. Steigerwald J. M. , in Electron Devices Meeting, 2008. IEDM 2008. IEEE International, p. 1 (2008).

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