Evaluation of Titanium Direct Bonding Mechanism-Reference-Cited by-同舟云学术

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Evaluation of Titanium Direct Bonding Mechanism

Published:2013 Issue:5 Volume:2 Page:N115-N119
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Baudin F.,Delaye V.,Guedj C.,Chevalier N.,Mariolle D.,Imbert B.,Fabbri J. M.,Di Cioccio L.,Bréchet Y.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Process development and bonding quality investigations of silicon layer stacking based on copper wafer bonding

2. Field Assisted Glass‐Metal Sealing

3. Room temperature Cu–Cu direct bonding using surface activated bonding method

4. Huang Z. , ECTC proc., P12 (2008).

5. shuanggwi M. H. , 10th EPTC Conf. n°4763468 pp. 405–411 (2008).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma activated titanium-based bonding for robust and reliable Si–Si and Si-glass integration;Ceramics International;2024-07

2. A reliable copper-free wafer level hybrid bonding technology for high-performance medical imaging sensors;2020 IEEE 70th Electronic Components and Technology Conference (ECTC);2020-06

3. Room-Temperature Wafer Bonding with Titanium Thin Films Based on Formation of Ti/Si Amorphous Layers;2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D);2019-05

4. Modeling and Integration Phenomena of metal-metal direct bonding technology;ECS Transactions;2014-08-14

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