W-Band Broadband Low Noise Amplifier Design
Author:
Funder
Agency for Defense Development
Publisher
Korean Institute of Electromagnetic Engineering and Science
Link
http://jkiees.org/download/download_pdf?doi=10.5515/KJKIEES.2022.33.4.318
Reference7 articles.
1. H. W. Choi, C. Y. Kim, and S. Choi, "6.7∼15.3 GHz, High-performance broadband low-noise amplifier with large transistor and two-stage broadband noise matching," IEEE Microwave and Wireless Components Letters, vol. 31, no. 8, pp. 949-952, Aug. 2021. 10.1109/LMWC.2021.3092742
2. H. W. Choi, S. Choi, and C. Y. Kim, "Ultralow-noise figure and high gain Ku-band bulk CMOS low-noise amplifier with large-size transistor," IEEE Microwave and Wireless Components Letters, vol. 31, no. 1, pp. 60-63, Jan. 2021. 10.1109/LMWC.2020.3037296
3. J. T. Lim, H. W. Choi, T. Joo, and C. Y. Kim, "Low noise amplifier with a merged duplexer," The Journal of Korean Institute of Electromagnetic Engineering and Science, vol. 31, no. 6, pp. 563-566, Jun. 2020. 10.5515/KJKIEES.2020.31.6.563
4. H. J. Park, J. S. Kim, J. H. Park, and B. S. Kim, "W-band high-gain low noise amplifier design using MOS capacitor neutralization technique," The Journal of Korea Institute of Electromagnetic Engineering and Science, vol. 30, no. 9, pp. 712-717, Sep. 2019. 10.5515/KJKIEES.2019.30.9.712
5. A. Leuther, M. Ohlrogge, L. Czornomaz, T. Merkle, F. Bernhardt, and A. Tessmann, "80 nm InGaAs MOSFET W-band low noise amplifier," in 2017 IEEE MTT-S International Microwave Symposium(IMS), Honololu, HI, Jun. 2017, pp. 1133-1136. 10.1109/MWSYM.2017.8058798
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