10‐GHz band 2 × 2 phased‐array radio frequency receiver with 8‐bit linear phase control and 15‐dB gain control range using 65‐nm complementary metal–oxide–semiconductor technology

Abstract

AbstractWe propose a 10‐GHz 2 × 2 phased‐array radio frequency (RF) receiver with an 8‐bit linear phase and 15‐dB gain control range using 65‐nm complementary metal–oxide–semiconductor technology. An 8 × 8 phased‐array receiver module is implemented using 16 2 × 2 RF phased‐array integrated circuits. The receiver chip has four single‐to‐differential low‐noise amplifier and gain‐controlled phase‐shifter (GCPS) channels, four channel combiners, and a 50‐Ω driver. Using a novel complementary bias technique in a phase‐shifting core circuit and an equivalent resistance‐controlled resistor–inductor–capacitor load, the GCPS based on vector–sum structure increases the phase resolution with weighting‐factor controllability, enabling the vector–sum phase‐shifting circuit to require a low current and small area due to its small 1.2‐V supply. The 2 × 2 phased‐array RF receiver chip has a power gain of 21 dB per channel and a 5.7‐dB maximum single‐channel noise‐figure gain. The chip shows 8‐bit phase states with a 2.39° root mean‐square (RMS) phase error and a 0.4‐dB RMS gain error with a 15‐dB gain control range for a 2.5° RMS phase error over the 10 to10.5‐GHz band.