Author:
SAM Raguilignaba,DIASSO Alain,ZOUMA Bernard,ZOUGMORÉ François
Subject
General Physics and Astronomy,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Agarwal SK, Jain SC, Harsh S (1982). Variation of minority carrier lifetime with level of injection in pn-junction devices. Electronics Letters 18(7):298-299.
2. Ba B, Kane M (1995). Open-circuit voltage decay in polycrystalline silicon solar cells. Solar Energy Materials and Solar Cells 37(3-4):259-271.
3. Ba B, Kane M, Fickou A, Sissoko G (1993). Excess minority carrier densities and transient short circuit currents in polycrystalline silicon solar cells. Solar Energy Materials and Solar Cells 31(1):33-49.
4. Charles JP, Haddi A, Maouad A, Bakhtiar H, Zerga A, Hoffmann A, Mialhe P (2000). La jo nction, du solaire la microlectronique. Reviews Energy Renewable 3:1-16
5. Dhariwal SR, Vasu NK (1981). A generalised approach to lifetime measurement in pn junction solar cells. Solid-State Electron 24(10):915-927.