Influence of Annealing Temperatures on Nonlinear Optical, Dielectric, Semiconducting Results, and Fermi Level Position for CdP0.03Te0.97 Thin Film

Abstract

CdP0.03Te0.97 thin films were deposited at room temperature using thermal evaporation and annealed at 100 and 200°C. The effect of annealing temperature Tann on both dispersion energy Ed and oscillating energy Eo were studied. The lattice dielectric constant εL and free carrier concentration/effective mass N/m* were calculated for these samples. The values of the first order of moment M-1, the third order of moment M-3, and static refractive index no were determined. Both of dielectric loss ε\ and dielectric tangent loss ε\\ for these films increased with photon energy (hν) and had the highest value higher than the energy gap Eg. All of the optical parameters such as real part of optical conductivity σ1, the imaginary part of optical conductivity σ2 and the relation between Volume Energy Loss/ Surface Energy Loss (VEL/SEL) were determined. The linear optical susceptibility χ(1) increased with Tann. The influence of annealing temperatures on all of the non-linear refractive index n2, the third-order non-linear optical susceptibility χ(3), and non-linear absorption coefficient βc were studied. Both of the electrical susceptibility χe and relative permittivity εr increased with Tann and had the highest value higher than Eg. The dependence of density valence band, conduction band, and position of Fermi level Ef were studied.