Relaxation Time Limits of Subsonic Steady States for Hydrodynamic Model of Semiconductors with Sonic or Nonsonic Boundary-Reference-Cited by-同舟云学术

Relaxation Time Limits of Subsonic Steady States for Hydrodynamic Model of Semiconductors with Sonic or Nonsonic Boundary

Published:2024-05-13 Issue:3 Volume:56 Page:3452-3477
ISSN:0036-1410
Container-title:SIAM Journal on Mathematical Analysis
language:en
Short-container-title:SIAM J. Math. Anal.

Author:

Feng Yue-Hong¹,Hu Haifeng²^ORCID,Mei Ming³^ORCID,Peng Yue-Jun⁴,Zhang Guo-Jing⁵

Affiliation:

1. Department of Mathematics, Faculty of Science, Beijing University of Technology, Beijing 100022, China.

2. Corresponding author. School of Science, Changchun University, Changchun 130022, China.

3. Department of Mathematics, Champlain College Saint-Lambert, Quebec, J4P 3P2, Canada, and Department of Mathematics and Statistics, McGill University, Montreal, Quebec, H3A 2K6, Canada.

4. Université Clermont Auvergne, CNRS, Laboratoire de Mathématiques Blaise Pascal, 63000, Clermont-Ferrand, France.

5. Corresponding author. School of Mathematics and Statistics, Northeast Normal University, Changchun 130024, China.

Funder

China Scholarship Council

National Natural Science Foundation of China

Scientific Research Program of Changchun University

Natural Sciences and Engineering Research Council of Canada

Publisher

Society for Industrial & Applied Mathematics (SIAM)

Reference49 articles.

1. A PHASE PLANE ANALYSIS OF TRANSONIC SOLUTIONS FOR THE HYDRODYNAMIC SEMICONDUCTOR MODEL

2. Subsonic Solutions for Steady Euler--Poisson System in Two-Dimensional Nozzles

3. Transport equations for electrons in two-valley semiconductors

4. Steady hydrodynamic model of semiconductors with sonic boundary and transonic doping profile

5. Radial solutions of hydrodynamic model of semiconductors with sonic boundary