Electrical Characteristics of Charge Trap Flash Memory with a Composition Modulated (ZrO2)x(Al2O3)1-xFilm-Reference-Cited by-同舟云学术

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Electrical Characteristics of Charge Trap Flash Memory with a Composition Modulated (ZrO2)x(Al2O3)1-xFilm

Published:2015-06-25 Issue:3 Volume:16 Page:130-134
ISSN:1229-7607
Container-title:Transactions on Electrical and Electronic Materials
language:en
Short-container-title:Transactions on Electrical and Electronic Materials

Author:

Tang Zhenjie,Zhang Jing,Jiang Yunhong,Wang Guixia,Li Rong,Zhu Xinhua

Publisher

The Korean Institute of Electrical and Electronic Material Engineers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kieeme/JAKO201525961587886.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of HfO2 Charge Trapping Layer Characteristics After UV Treatment;ECS Journal of Solid State Science and Technology;2021-04-01

2. Correlation between memory characteristics and energy band bending resulted from composition distribution of trapping layer for charge trap memory;Semiconductor Science and Technology;2018-10-25

3. Atomic-layer-deposition-assisted ZnO nanoparticles for oxide charge-trap memory thin-film transistors;Nanotechnology;2017-01-13

4. Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2Treated Al2O3Tunneling Layer: A Cost-Effective Method;IEEE Electron Device Letters;2016-10

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