A Study on Distributions of Boron Ions Implanted by Using B and BF2Dual Implantations in Silicon-Reference-Cited by-同舟云学术

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A Study on Distributions of Boron Ions Implanted by Using B and BF2Dual Implantations in Silicon

Published:2010-06-25 Issue:3 Volume:11 Page:120-125
ISSN:1229-7607
Container-title:Transactions on Electrical and Electronic Materials
language:en
Short-container-title:Transactions on Electrical and Electronic Materials

Author:

Jung Won-Chae

Publisher

The Korean Institute of Electrical and Electronic Material Engineers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kieeme/JAKO201020254144975.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dispersion, Threshold and Gain Characteristics of Brillouin Scattered Stokes Mode in Ion-Implanted Semiconductor Quantum Plasmas;Iranian Journal of Science;2024-04-02

2. Quantum effects on dispersion, threshold and gain characteristics of Brillouin scattered Stokes mode in ion-implanted semiconductor plasmas;Optik;2023-11

3. Atomic Diffusion Mechanism in BF2⁺ Implanted and Annealed n-Fz Si junction using Analytical Approach: Comparison with 2-D TCAD Process Simulation Result;Journal of Physics: Conference Series;2023-10-01

4. Graphene defects induced by ion beam;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-10

5. Improving stress stability in low-pressure chemical vapor deposited silicon dioxide films by ion implantation;Thin Solid Films;2016-01

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