Near-Surface Analysis of Semicondutor Using Grazing Incidence X-Ray Fluorescence

Abstract

SummaryThe X-ray external total reflection was used for the x-ray fluorescence analysis of the near surface layer of a GaAs wafer and a GaAlAs epilayer. Synchrotron radiation was used as an excitation source. The intensity ratio between the Ga K and As K fluorescence signals was measured as a function of the glancing angle. The reduction of As atoms near the surface of less than a hundred Å was observed for the high temperature annealed GaAlAs epilayer.